کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
6456708 | 1420649 | 2018 | 6 صفحه PDF | دانلود رایگان |
- ZnSnP2 solar cell with a structure of Al/ZnO:Al/ZnO/(Cd,Zn)S/ZnSnP2/Cu was made.
- The barrier height at ZnSnP2 and Cu back electrode was estimated to be 59Â meV.
- The recombination rates of the ZnSnP2 solar cell were investigated.
- Decreasing interface recombination rates are challenging in the ZnSnP2 solar cell.
- The 3.44%-efficient ZnSnP2 solar cell was ultimately achieved.
A ZnSnP2 bulk crystal was prepared by flux method and cut into a ZnSnP2 wafer with thickness of 200 µm, which was utilized as the absorber of a ZnSnP2 solar cell with a Al/ZnO:Al/ZnO/(Cd,Zn)S buffer/ZnSnP2 wafer/Cu structure. A 3.44%-efficient ZnSnP2 solar cell was obtained. Moreover, we assessed performance of the ZnSnP2 solar cell concentrating on main loss mechanisms limiting device efficiency. Based on investigations of the majority carrier barrier at ZnSnP2 and the Cu back electrode, the barrier height is estimated to be 59 meV, which could limit the fill factor of the solar cell and should be decreased. In addition, voltage-independent recombination rates at the buffer/absorber interface (Ri0), in the space-charge region (Rd0), and in the quasi-neutral region (Rb0) of the ZnSnP2 solar cell were determined from illumination dependence of the open-circuit voltage. It was found that Rd0 is 2.65Ã1013 cmâ2sâ1, much high than Ri0 + Rb0 of 1.2Ã109 cmâ2sâ1. The high Rd0 was attributed to the mechanical surface polish of the ZnSnP2 wafer. It is thought that Rb0 should be lower than Ri0 because of the large ZnSnP2 grain and non-optimized buffer/absorber interface. These findings suggested that Ri0 and Rd0 should be further decreased to enhance photovoltaic performance.
Journal: Solar Energy Materials and Solar Cells - Volume 174, January 2018, Pages 412-417