کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
6456897 | 1420651 | 2017 | 5 صفحه PDF | دانلود رایگان |
- GaAs solar cells on Si substrates with efficiency of 11.88% have been developed.
- This was enabled by a heavily As-doped Ge buffer layer with a low TDD of < 5 Ã 10Â 6cmâ2.
- Manufacturable III-V photovoltaics on large-area Si substrates become viable.
A single junction gallium arsenide (GaAs) solar cell on silicon (Si) substrate with energy conversion efficiency of 11.88% under the AM1.5 G spectrum at 1 sun intensity without an anti-reflection coating (ARC) has been developed. This development was enabled by utilizing an intermediate, thin arsenic-doped germanium (As-doped Ge) buffer layer. The thin epitaxial Ge layer (< 2 µm) grown on the Si substrate created a virtual Ge-on-Si (Ge/Si) substrate for subsequent growth of the GaAs solar cell, providing low threading dislocation density (TDD) of < 5 à 106 cmâ2. The energy conversion efficiency could be further improved to 16% upon optimizing the ARC and metal coverage. Hence, a manufacturable III-V photovoltaic on a large-area Si substrate has become possible.
Journal: Solar Energy Materials and Solar Cells - Volume 172, December 2017, Pages 140-144