Construction of nanowire CH3NH3PbI3-based solar cells with 17.62% efficiency by solvent etching technique

- A simple and novel solvent etching technique was first successfully induced to fabricate 1D nanowire MAPbI3 film.
- A PCE as high as 17.62% was demonstrated for the nanowire MAPbI3-based solar cells.
- 1D nanowire can be precisely controlled by control the proportion of DMF/IPA mixed solution.

1D Nanowire CH3NH3PbI3 thin films have been successfully constructed by solvent etching technique. The etching solution was consisted of a small amount of polar solvent in non-polar solvent, and the roughness of the film can be precisely controlled by the adding amount of polar solvent. A best and repeatable PCE of 17.62% was achieved from the CH3NH3PbI3-based solar cells device with nanowire film morphology and p-i-n structure. Solvent etching process was an advanced technique for perovskite nanowire construction because of it's simple, universal and effective operation.

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