Surface plasmon resonance aided analysis of quantum wells for photonic device applications

The present report aims at analyzing the quantum well (QW) structures using the highly sensitive surface plasmon resonance (SPR) technique in Otto configuration. The optical properties of ZnO and Ni doped ZnO (NiZnO) based QW structures grown using Pulsed laser deposition technique are investigated. An optimal value of QW width (8 nm) is deduced from the SPR study for maximum charge carrier confinement which is in coherence with the photoluminescence (PL) studies conducted on the same QW structures. The metal-dielectric interfaces were modelled primarily for the design of QW structures to be analysed experimentally. The mechanism behind the coupling of QWs with SP excitation has been proposed theoretically and experimentally to substantiate the results of PL and SPR studies. The variation in the SPR curves observed as a function of the QW width can be attributed to the interaction of evanescent SP field originating at the Au/QW interface and electroabsorptive behaviour of QWs towards the SP field.