کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
728103 1461415 2015 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Ion beam induced structural and electrical modifications of Fe doped molybdenum oxide thin films
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
Ion beam induced structural and electrical modifications of Fe doped molybdenum oxide thin films
چکیده انگلیسی

In the present paper, structural and electrical properties of 2% Fe doped molybdenum oxide thin films grown by the pulsed laser deposition (PLD) technique have been reported. Ion beam induced modifications of these films were studied under the bombardment of 100 MeV Ni8+ ions. X-ray diffraction (XRD), Fourier transform infrared spectroscopy, and micro-Raman measurements suggested the formation of mainly orthorhombic (α-phase) MoO3 in the films along with the presence of monoclinic (β-phase) MoO3 and MoO2. Ion bombardment induced structural disorder in the MoO3 films. Room temperature resistivity of the as-grown film was 13.85 Ω-cm. The resistivity increased with increasing ion fluence (ϕ), and the values were found to be 47.6 Ω-cm, 73.7 Ω-cm, and 101.6 Ω-cm for ϕ=1×1012, 1×1013, and 1×1014 ions-cm−2, respectively.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 31, March 2015, Pages 593–598
نویسندگان
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