Numerical analysis of InxGa1−xN/SnS and AlxGa1−xN/SnS heterojunction solar cells

• InxGa1−xN/SnS and AlxGa1−xN/SnS solar cells are studied by numerical analysis.
• Performances of InxGa1−xN/SnS solar cells enhanced with decreasing In content.
• The electron barrier leads to the degraded efficiency of AlxGa1−xN/SnS solar cells.
• GaN/SnS solar cell exhibits the highest efficiency 26.34%.

In this work the photovoltaic properties of InxGa1−xN/SnS and AlxGa1−xN/SnS heterojunction solar cells are studied by numerical analysis. The photovoltaic performances of InxGa1−xN/SnS solar cells are enhanced with the decreasing In content and the GaN/SnS solar cell exhibits the highest efficiency. The efficiencies of GaN/SnS solar cell improve with the increased SnS thickness and the reduced GaN thickness. For the AlxGa1−xN/SnS solar cells, there is electron barrier in the AlxGa1−xN/SnS interface. The electron barrier becomes larger with increasing Al content and lead to the degraded efficiency of AlxGa1−xN/SnS solar cells. The simulation contributes to designing and fabricating SnS solar cells.

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