کد مقاله کد نشریه سال انتشار مقاله انگلیسی ترجمه فارسی نسخه تمام متن
77491 1420667 2016 9 صفحه PDF سفارش دهید دانلود کنید
عنوان انگلیسی مقاله
Efficiency limit of InAs/GaAs quantum dot solar cells attributed to quantum dot size effects
ترجمه فارسی عنوان
حد کارایی سلول های خورشیدی نقطه کوانتومی InAs/GaAs منسوب به اثر اندازه نقطه کوانتومی
موضوعات مرتبط
مهندسی و علوم پایه مهندسی شیمی کاتالیزور
چکیده انگلیسی


• The effect of quantum dot (QD) size on the optical and electrical properties of InAs/GaAs QD solar cells (QDSCs) was investigated.
• The QD size effects on the p-n junction electric fields (Fpn) and the efficiencies (η) of the QDSCs were revealed.
• The QD size affects η and Fpn due to the balance between the carrier generation and exhaustion processes through trapping and re-capturing.

The effects of quantum dot (QD) size on the optical and electrical properties of InAs/GaAs QD solar cells (QDSCs) were investigated. QDSCs with varying InAs QD size were fabricated by controlling the total InAs deposition thickness (θ) from 0 to 3.0 mono-layers (ML). The optical and electrical properties of the QDSCs were investigated using photoluminescence (PL), time-resolved PL (TRPL), photoreflectance (PR) spectroscopy, capacitance-voltage (C-V), and current-voltage (J-V) measurements. The QD size effects on the p-n junction electric fields (Fpn) and the efficiencies (η) of the QDSCs were revealed. The QDSCs had a maximum η of 21.17% for θ=2.0 ML (the efficiency is enhanced by 17.4% over the reference GaAs-SC) and minimized Fpn (113 kV/cm) by an enhanced photovoltaic effect caused by improved carrier generation. We find that these optimal properties result from a balance between carrier generation and exhaustion processes through trapping and re-capturing by defects and relatively large QDs.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solar Energy Materials and Solar Cells - Volume 155, October 2016, Pages 70–78
نویسندگان
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