Effect of anodic oxidation time on resistive switching memory behavior based on amorphous TiO2 thin films device

Effect of anodic oxidation time on resistive switching memory behavior based on amorphous TiO2 thin films device

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Chemical Physics Letters - Volume 706, 16 August 2018, Pages 477-482

Yanmei Yu, Feng Yang, Shuangsuo Mao, Shouhui Zhu, Yongfang Jia, Ling Yuan, Mayameen Salmen, Bai Sun,