کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8146034 | 1524098 | 2018 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Intense 3.9â¯Âµm emission of Ho3+ doped YAlO3 single crystal
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک اتمی و مولکولی و اپتیک
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چکیده انگلیسی
The Ho3+-doped YAlO3 (YAP) crystal was successfully grown using the Czochralski technique. An intense 3.9â¯Âµm emission in Ho:YAP crystal was observed for the first time. The spectroscopic parameters were determined by Judd-Ofelt theory based on the measured polarized absorption spectra. The intensity parameters Ω2,4,6, exited state lifetimes, branching ratios, and emission cross-sections were calculated. Under optical pumping at 890â¯nm, an intense 3.9â¯Âµm emission with a bandwidth of 190â¯nm at full width half maximum was observed. The maximum emission cross section of Ho:YAP crystal is estimated to be 0.302â¯Ãâ¯10â20â¯cm2 at 4096â¯nm. The decay lifetime of the level was measured to be 0.103â¯ms. We propose that the Ho:YAP crystal may be a promising material for 3.9â¯Âµm laser applications.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Infrared Physics & Technology - Volume 88, January 2018, Pages 97-101
Journal: Infrared Physics & Technology - Volume 88, January 2018, Pages 97-101
نویسندگان
Rui Wang, Xingbin Huang, Yichuan Wang, Runsheng Huang, Peixiong Zhang, Siqi Zhu, Hao Yin, Zhenqiang Chen, Yi Zheng, Guiyao Zhou,