کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8249638 | 1533372 | 2018 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Preliminary characterization of the response of an organic field effect transistor to ionizing radiation
ترجمه فارسی عنوان
خصوصیات اولیه از پاسخ یک ترانزیستور اثر میدان الکتریکی به تابش یونیزه
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
تشعشع
چکیده انگلیسی
Organic thin film transistors (OTFT) were investigated as a novel radiation detector. The OTFTs were fabricated on a flexible PET substrate with a PMMA dielectric layer and a pentacene semiconductor. OTFTs were irradiated up to 400â¯Gy using kilovoltage (100 and 180â¯kVp) and megavoltage (6 and 18â¯MV) photon beams. One OTFT was irradiated to 1000â¯Gy using 6â¯MV to observe the longevity of the device. Irradiating the devices caused a positive threshold voltage shift in each device. The magnitude of the threshold voltage shift per unit dose decreased with accumulated dose until it stabilized after approximately 200â¯Gy. The sensitivity ranged from 2 to 10â¯mV/Gy at low accumulated dose and decreased to 0.5-1.5â¯mV/Gy after 200â¯Gy of accumulated dose across the various OTFTs. After 400â¯Gy all of the devices were still functional with a loss in mobility of about 15, 14, 12 and 9% for beam qualities of 100â¯kV, 180â¯kV, 6â¯MV, and 18â¯MV, respectively. After 1000â¯Gy using 6â¯MV the OTFT was still functional with a sensitivity of 0.8â¯Â±â¯0.1â¯mV/Gy after 300â¯Gy. This study showed that an OTFT on a flexible substrate shows a measureable response to photon irradiation of various qualities.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Radiation Measurements - Volume 118, November 2018, Pages 31-35
Journal: Radiation Measurements - Volume 118, November 2018, Pages 31-35
نویسندگان
Michael A. Hupman, Ian G. Hill, Alasdair Syme,