کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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847004 | 909216 | 2016 | 5 صفحه PDF | دانلود رایگان |
This article discusses influence of the annealing temperature on the structural, optical and electrical properties of indium oxide thin films which are prepared on glass substrate heated at 150 °C by ultrasonic spray technique using indium chloride as precursor solution. The deposited samples annealed at 300 °C and 500 °C for 1 h. Structural analysis of these films suggest that the films are polycrystalline with a preferred grain orientation along the (222) plane, and the crystalline state of these films improve with the increase in the annealing temperature from 300 °C to 500 °C. The optical band gap is varied in the range of 3.64–3.73 ev. UV–vis spectroscopy show that the average transmittance is about 85% in the visible region, and the optical transmittance decrease with the increase of the annealing temperature. The electrical resistivity decreases from 80 Ω cm to 9.8 × 10−3 Ω cm with the increase of the annealing temperature from 300 °C to 500 °C.
Journal: Optik - International Journal for Light and Electron Optics - Volume 127, Issue 16, August 2016, Pages 6329–6333