کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
847668 | 909231 | 2016 | 5 صفحه PDF | دانلود رایگان |
Aluminum–nitrogen (Al–N) codoped zinc oxide (ZnO) thin films were grown on glass substrate by radio frequency (RF) reactive magnetron sputtering using aluminum doped zinc oxide (AZO, 2.5 wt% Al2O3) target and N2 as reactive gas. The structural, morphology, optical and electrical properties were also investigated with different flow rate of N2 gas. X-ray diffraction results shows that codoped ZnO thin films have similar wurtzite structure like undoped ZnO film. Al–N thin films have high transparency 78% in visible region as the nitrogen flow rate increases the transparency and band gap decreases. The best p-type codoped sample shows a resistivity and hole concentration of 0.554 Ω cm and 8.3 × 1019 cm−3 at room temperature, respectively. Current–voltage (I–V) characteristics of p-type codoped ZnO thin films are also discussed.
Journal: Optik - International Journal for Light and Electron Optics - Volume 127, Issue 2, January 2016, Pages 603–607