Magnetic and ferroelectric properties of Indium-doped gallium ferrite

Indium-doped Ga1−xInxFeO3 (GIFO) with x = 0-0.15 were prepared by solid state reaction. Structural, magnetic and electric properties of the samples were studied. All specimen could be well indexed by the polar Pc21n space group and no phase transition was observed. Saturated magnetization exhibits a maximum at light doping sample of Ga0.95In0.05FeO3 due to the enhancement of the distortion, showing a correspondence with the variation of Fe3+ distribution difference between two forms of sites. Pyroelectric measurements show an increase of polarization after doping. The results indicate that both magnetism and ferroelectricity of GaFeO3 can be optimized by In doping.