کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
8948445 1645668 2018 18 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Effect of Ni doping on the structural, electrical, and optical properties of transparent CuCrO2 films grown using pulsed laser deposition
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
Effect of Ni doping on the structural, electrical, and optical properties of transparent CuCrO2 films grown using pulsed laser deposition
چکیده انگلیسی
In this study, the structural, electrical, and optical properties of CuCr1−xNixO2 epitaxial films (x = 0, 0.01, 0.03, 0.05), which exhibited p-type properties, were investigated. The (001)-oriented epitaxial films were deposited on c-plane α-Al2O3 substrates using pulsed laser deposition at a growth temperature of 700 °C and oxygen pressure of 10 mTorr. The optical energy band gap of the CuCr0.95Ni0.05O2 film was determined to be 3.22 eV. The hole carrier concentration of the CuCrO2 film increased from 5.1 × 1014 to 2.2 × 1017 cm−3 upon doping with 5 at% Ni. Based on Hall measurement and X-ray photoelectron spectroscopy results, it was suggested that the substituted Ni2+ dopants at Cr3+ sites formed an acceptor level without any charge compensation with Cu2+ and/or Cr4+.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Ceramics International - Volume 44, Issue 15, 15 October 2018, Pages 17743-17748
نویسندگان
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