کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8948445 | 1645668 | 2018 | 18 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of Ni doping on the structural, electrical, and optical properties of transparent CuCrO2 films grown using pulsed laser deposition
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this study, the structural, electrical, and optical properties of CuCr1âxNixO2 epitaxial films (xâ¯=â¯0, 0.01, 0.03, 0.05), which exhibited p-type properties, were investigated. The (001)-oriented epitaxial films were deposited on c-plane α-Al2O3 substrates using pulsed laser deposition at a growth temperature of 700â¯Â°C and oxygen pressure of 10 mTorr. The optical energy band gap of the CuCr0.95Ni0.05O2 film was determined to be 3.22â¯eV. The hole carrier concentration of the CuCrO2 film increased from 5.1â¯Ãâ¯1014 to 2.2â¯Ãâ¯1017 cmâ3 upon doping with 5â¯at% Ni. Based on Hall measurement and X-ray photoelectron spectroscopy results, it was suggested that the substituted Ni2+ dopants at Cr3+ sites formed an acceptor level without any charge compensation with Cu2+ and/or Cr4+.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Ceramics International - Volume 44, Issue 15, 15 October 2018, Pages 17743-17748
Journal: Ceramics International - Volume 44, Issue 15, 15 October 2018, Pages 17743-17748
نویسندگان
Se-Yun Kim, Joon-Hyung Lee, Jeong-Joo Kim, Young-Woo Heo,