کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8948541 | 1645669 | 2018 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electric field-induced phase transition and energy storage performance of highly-textured PbZrO3 antiferroelectric films with a deposition temperature dependence
ترجمه فارسی عنوان
عملکرد الکتریکی فاز انتقال الکتریکی و ذخیره انرژی انرژی فتوولتائیک ضد اشعه ماوراء بنفش بسیار بافت با وابستگی دما
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کلمات کلیدی
ضد انفجار رسوب لیزر پالسی، فیلم نازک، عملکرد ذخیره سازی انرژی، زندگی دوچرخه سواری شارژ تخلیه،
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
چکیده انگلیسی
Thin PbZrO3 (PZO) antiferroelectric films with (001)-preferred orientation were deposited on SrRuO3/Ca2Nb3O10-nanosheet/Si substrates using pulsed laser deposition. Variation of the deposition temperature was found to play a key role in the control of the microstructure and strongly influence the energy storage performance of the thin film. The critical phase switching field, where the aligned antiferroelectric (AFE) domains start to transform into the ferroelectric (FE) state, decreased with increasing temperature. On the other hand, the content of the FE phase in the AFE PZO thin films increased with increasing deposition temperature. A large recoverable energy-storage density of 16.8âJ/cm3 and high energy-storage efficiency of 69.2% under an electric field of 1000âkV/cm were achieved in the films deposited at 525â°C. This performance was due to the high forward switching field and backward switching field values and the low difference between these two fields. Moreover, the PZO thin films showed great charge-discharge cycling life with fatigue-free performance up to 1010 cycles and good thermal stability from room temperature to 100â°C.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of the European Ceramic Society - Volume 38, Issue 15, December 2018, Pages 4953-4961
Journal: Journal of the European Ceramic Society - Volume 38, Issue 15, December 2018, Pages 4953-4961
نویسندگان
Minh D. Nguyen, Guus Rijnders,