Keywords: رشته هدایت; Dielectric breakdown; Dielectric breakdown strength; Dielectric breakdown toughness; Energy release rate; Conductive filament;
مقالات ISI رشته هدایت (ترجمه نشده)
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Keywords: رشته هدایت; Additive manufacturing; Fused filament fabrication; 3D printing; Electronics; Conductive filament;
Keywords: رشته هدایت; Fused filament fabrication; 3D printing; Electronics; Conductive filament; Circuits;
Keywords: رشته هدایت; RRAM (resistive random access memory); Transition metal oxide; Conductive filament; Resistive switching;
Keywords: رشته هدایت; CBRAM; C-AFM; Conductive filament; Resistive switching
Investigation of resistive switching in PVP and ultra-thin HfOx based bilayer hybrid RRAM
Keywords: رشته هدایت; Conductive bridge resistive random access memories (CBRAMs); Resistive switching; Hybrid CBRAM; Electro-migration; Pinholes; Conductive filament;
The impact of TiW barrier layer thickness dependent transition from electro-chemical metallization memory to valence change memory in ZrO2-based resistive switching random access memory devices
Keywords: رشته هدایت; Conductive filament; Electro-chemical metallization; Valence change memory; Switching device; Zirconium dioxide; Titanium tungsten alloy;
Conductive filament structure in HfO2 resistive switching memory devices
Keywords: رشته هدایت; Resistive switching; Electron energy loss spectroscopy; Conductive filament;
Coexistence of analog and digital resistive switching in BiFeO3-based memristive devices
Keywords: رشته هدایت; BiFeO3; Analog resistive switching; Digital resistive switching; Space-charge limited conduction; Conductive filament;
Forming-free electrochemical metallization resistive memory devices based on nanoporous TiOxNy thin film
Keywords: رشته هدایت; Resistive switching; Forming free; Nanoporous; Titanium oxynitride; Conductive filament;
Dedicated random telegraph noise characterization of Ni/HfO2-based RRAM devices
Keywords: رشته هدایت; Conductive filament; HfO2; Ni; Resistive random access memory (RRAM); Random telegraph noise (RTN); Variability;
Temperature and polarity dependence of the switching behavior of Ni/HfO2-based RRAM devices
Keywords: رشته هدایت; Conductive filament; HfO2; Ni; Resistive random access memory (RRAM); Unipolar resistive switching; Variability;
Conductive filament evolution in HfO2 resistive RAM device during constant voltage stress
Keywords: رشته هدایت; RRAM; CVS; Conductive filament; Reliability;
Resistive switching behaviors of Cu/TaOx/TiN device with combined oxygen vacancy/copper conductive filaments
Keywords: رشته هدایت; RRAM; CBRAM; Resistive switching; TaOx; Conductive filament
Statistics of retention failure in the low resistance state for hafnium oxide RRAM using a Kinetic Monte Carlo approach
Keywords: رشته هدایت; Conductive filament; Diffusion barrier; Markov model; Retention failure; RRAM;
Resistive switching and Schottky diode-like behaviors in Pt/BiFeO3/ITO devices
Keywords: رشته هدایت; Bismuth ferrite; Resistive switching; Schottky effect; Conductive filament;
Microscopy study of the conductive filament in HfO2 resistive switching memory devices
Keywords: رشته هدایت; Resistive switching; Conductive filament; Electron energy loss spectroscopy;
Resistive switching characteristics in HfOx layer by using current sweep mode
Keywords: رشته هدایت; Resistive switching; Conductive filament; Current sweep; Nonvolatile memory