کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1665270 1518039 2014 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Upgrading the “Berg-model” for reactive sputtering processes
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Upgrading the “Berg-model” for reactive sputtering processes
چکیده انگلیسی


• An upgraded version of the original “Berg-model”
• This model includes: atomic sputtering, ion implantation and knock-in effects.
• The upgraded model predicts effects that are not included in the original model.

Several phenomena are neglected in the original “Berg model” in order to provide a simple model of the reactive sputtering process. There exist situations, however, where this simplified treatment limits the usefulness of the model. To partly correct for this, we introduce an upgraded version of the basic model. We abandon the simplifying assumption that compound targets are sputter eroded as molecules. Instead, the molecule is split and individual atoms will be sputter ejected. Also, the effect of ionized reactive gas atoms implanted into the target will be considered. We outline how to modify the original model to include these effects. Still, the mathematical treatment is maintained simple so that the new model may serve as an easy-to-understand tutorial of the complex mechanisms of reactive sputtering.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 565, 28 August 2014, Pages 186–192
نویسندگان
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