| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10128542 | Computational Materials Science | 2018 | 6 Pages |
Abstract
A 3â¯Ãâ¯3â¯Ãâ¯1 supercell model of 4H-SiC with 72 atoms. One of the two Ni dopants is fixed at the position labeled Ni0, The Si atoms labeled by 1-10 are the sites to be replaced by the other doped Ni atoms.133
Related Topics
Physical Sciences and Engineering
Engineering
Computational Mechanics
Authors
Long Lin, Jingtao Huang, Weiyang Yu, Hualong Tao, Linghao Zhu, Pengtao Wang, Zhanying Zhang, Jisheng Zhang,