| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10128720 | Solid State Communications | 2018 | 4 Pages |
Abstract
The temperature and magnetic field dependent oscillatory magneto-resistance of a compressively strained La0.3Pr0.4Ca0.3MnO3 thin film was measured for various post annealing conditions (i.e., Argon/Air) in order to study the effects of hole concentration on the magnitude of the negative AMR below the crossover temperature T*. It was found that Ar and Air annealing have adverse effects on the negative AMR below T*. Interestingly, annealing driven hole doping and A-site Pr doping show similar effects on the negative AMR of these films. The mechanism responsible for these changes is discussed.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Materials Science (General)
Authors
H.S. Alagoz, K. Gajjar, K.H. Chow, J. Jung,