Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10129048 | Journal of Magnetism and Magnetic Materials | 2019 | 5 Pages |
Abstract
In the search of functional diluted magnetic semiconductors, a study of effects of Mn ions implantation on structural and magnetic properties of AlInN/GaN/sapphire films is reported. Mn ions at 200â¯keV were implanted into the layers at three doses 5â¯Ãâ¯1014â¯cmâ2, 5â¯Ãâ¯1015â¯cmâ2 and 5â¯Ãâ¯1016â¯cmâ2. The as-implanted samples were thermally annealed and investigated by using X-ray diffraction (XRD), Rutherford backscattering spectroscopy (RBS) and vibrating sample magnetometry (VSM). The structural analysis of the samples indicated that the sample implanted at dose of 5â¯Ãâ¯1014â¯cmâ2 and thermally annealed at 750â¯Â°C exhibited good crystalline recovery. The ferromagnetism of the samples was investigated by recording magnetization as a function of applied magnetic field. The magnetic characterizations exhibited well shaped hysteresis at room temperature which indicates presence of high temperature ferromagnetism in the samples. The findings of this work pointed out that AlInN/GaN samples implanted with Mn ions at dose of 5â¯Ãâ¯1016â¯cmâ2 and annealing at 750â¯Â°C exhibited maximum magnetization. On the basis of first principles calculations, it is predicted that p-d interaction is the mechanism of ferromagnetic ordering in the material.
Keywords
Related Topics
Physical Sciences and Engineering
Physics and Astronomy
Condensed Matter Physics
Authors
Abdul Majid, Salah Ud-Din Khan, Sajjad Haider, J.J. Zhu,