Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10133577 | Sensors and Actuators A: Physical | 2018 | 18 Pages |
Abstract
We studied low temperature (<250â°C) transfer of 8âin. full sized thin Si wafer layer on the SiO2/Si substrate without any wafer flip up/down and subsequent high temperature process. This method includes temporary bonding of carrier wafer with bonding material at 200â°C, grinding or etching substrate, and transfer layer at 250â°C. Thickness values of transferred thin Si layer using bulk Si and silicon-on-insulator (SOI) wafer substrates are 87âμm and 216ânm on the SiO2/Si substrate, respectively. Plasma treatment under N2 and O2 mixture ambient assisting to form hydrophilic surface was carried out during bonding process and enhanced bonding strength was confirmed by contact angle measurement. Our wafer bonding process can be feasible to form various monolithic 3D devices due to thin Si layer transfer and low temperature process.
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Authors
Yu-Rim Jeon, Hoonhee Han, Changhwan Choi,