Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10134154 | Optik - International Journal for Light and Electron Optics | 2018 | 18 Pages |
Abstract
ZnS and ZnS:F films were produced on glass substrates heated up to 350â±â5â°C by ultrasonic spray pyrolysis method. FTIR and Raman spectroscopy measurements were applied for determining phases included in undoped and F doped ZnS films. The scanning electron microscopy (SEM) images of the film surfaces showed that F doping caused significant contraction in particle size of the films. Energy Dispersive Spectrometer (EDS) analyses verified the presence of all expected elements including Zn, S and F. The optic characteristics of F doped ZnS films were analyzed by using their transmittance and reflectance spectra obtained by UV-vis spectrophotometer. It was determined that ZnS films exhibit a relatively high transmittance of 80% in the visible region. Refractive index values of the ZnS films showed similar conduct in 400-700ânm range. The optical band gap of the ZnS films decreased with F dopant. The electrical resistivity values of the films were calculated for the ZnS films by using current-voltage change graphics drawn in 0-100âV range through the measurement results obtained in room-temperature and dark setting and it was determined that F doping decreased resistivity values of the ZnS films.
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Engineering (General)
Authors
T. Hurma,