Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10136034 | Thin Solid Films | 2018 | 28 Pages |
Abstract
In this work, zinc sulphoselenide ZnSxSe1-x; (0.0â¯â¤â¯xâ¯â¤â¯1.0) thin films were grown on glass substrates using a computerized chemical spray pyrolysis. The mechanism of growth and the structural, morphological, compositional, optical and electrical properties were studied. An X-ray diffraction study confirmed that the polycrystalline ZnSxSe1-x thin films had a cubic zinc blende structure with a preferential ã111ã orientation. The shift in the peak <111> direction towards higher 2θ values with increasing sulfur concentration confirmed the formation of a solid solution. The crystallite size was observed to be in the range 18-28â¯nm. Using energy dispersive X-ray spectroscopy, the formation of nearly stoichiometric ZnSxSe1-x thin films was confirmed. The optical band gap increased from 2.84â¯eV to 3.57â¯eV when the composition of the ZnSxSe1-x was changed. The thin films were found to be semiconducting in nature. The observed tunable optical and electrical properties of the ZnSxSe1-x thin films suggest that they can be used for a wide range of optoelectronic applications.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Nanotechnology
Authors
Nandkishor M. Patil, Santosh G. Nilange, Abhijit A. Yadav,