Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10139024 | Solar Energy Materials and Solar Cells | 2018 | 7 Pages |
Abstract
Significant surface related degradation (SRD) is observed in samples passivated with either SiNx:H or AlOx:H/SiNx:H during treatment at 150â¯Â°C and 1 sun equivalent illumination intensity. Degradation of SiNx:H passivation is caused by a decrease of chemical passivation quality whereas degradation of AlOx:H/SiNx:H is caused by a decrease of fixed charge density. SRD is, however, strongly suppressed on highly doped silicon surfaces resulting from a diffusion step. Device simulations indicate that this cannot only be explained by reduced sensitivity to changes at the silicon surface due to the diffused region, and implications for defect formation are discussed.
Related Topics
Physical Sciences and Engineering
Chemical Engineering
Catalysis
Authors
David Sperber, Anton Schwarz, Axel Herguth, Giso Hahn,