Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10142747 | Chinese Journal of Physics | 2018 | 27 Pages |
Abstract
In this work, we have theoretically studied differential cross section (DCS) of Raman scattering of InxGa1âxN/GaN quantum dot (QD) within the frame work of effective-mass approximation at 0K. Numerical calculations show that built-in electric field has a significant influence on the DCS. We find that the change of built-in electric field and parabolic frequencies can induce Raman shifts, and the full width at half maximum (FWHM) of Raman spectrum increases with increasing built-in electric field.
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Authors
Xiaotong Guo, Cuihong Liu,