| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10147590 | Scripta Materialia | 2019 | 4 Pages |
Abstract
Direct bonding of diamond and Al is achieved by surface activated bonding at room temperature. The interfacial structures of the diamond/Al bonding interface with annealing at different temperatures are investigated under in-situ annealing in a transmission electron microscope (TEM). An amorphous layer with a thickness of 4â¯Â±â¯0.5â¯nm is formed at the bonding interface without annealing, the thickness of the amorphous layer decreases with increasing annealing temperature, the amorphous layer vanished after annealing at 600â¯Â°C. No structural defects are observed at the bonding interface with annealing at different temperatures.
Related Topics
Physical Sciences and Engineering
Materials Science
Ceramics and Composites
Authors
Jianbo Liang, Shoji Yamajo, Martin Kuball, Naoteru Shigekawa,