Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10155686 | Superlattices and Microstructures | 2018 | 8 Pages |
Abstract
In this paper, a new 4H-SiC double-layer thin n-base LTT with a trenched-junction isolated amplifying gate is proposed and investigated to compensate for the shortcomings of the conventional SiC amplifying gate structures. By using double-layer thin n-base structure, the turn-on performance of the pilot LTT is improved. According to simulations, the trenched-junction isolated amplifying gate works well and the turn-on delay of the proposed device is only 451 ns, when triggered by 500â¯mW/cm2 ultraviolet light. Meanwhile, the breakdown voltage remains higher than 10â¯kV. Comparing with conventional resistance isolated amplifying gate and trench isolated amplifying gate, the proposed trenched-junction isolated gate structure shows better performances in both area utilization and blocking characteristic.
Keywords
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Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Xi Wang, Hongbin Pu, Qing Liu, Liqi An,