| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10155712 | Superlattices and Microstructures | 2018 | 12 Pages |
Abstract
Based on the first-principles, we survey the structure, electronic and optical properties of ReS2/bi-layer, The result indicate that ReS2 is a direct band-gap semiconductor. And we calculate the optical properties of the ReS2 and bi-layer. Remarkably, the band gap opened in the ReS2 and bi-layer can be effectively regulated through external E-field and biaxial strain. These results provide a way to design photoelectric device and high-performance FETs at room temperature.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Jia-Qi Zong, Shu-Feng Zhang, Wei-Xiao Ji, Chang-Wen Zhang, Ping Li, Pei-Ji Wang,