| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10155721 | Superlattices and Microstructures | 2018 | 6 Pages |
Abstract
A novel normally-off AlGaN/GaN HEMT with a recess-free gate featuring field coupling capability is proposed via modeling and simulation design for the first time. The simplified numerical model confirms the field coupling effect can drag down Schottky barrier of the source for modulating the reverse Schottky barrier diode current at a positive gate voltage. An experimental calibration and the detailed simulation suggest the proposed HEMT's good potential in electronic application.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Zeheng Wang, Jun Cao, Fangzhou Wang, Wanjun Chen, Bo Zhang, Songnan Guo, Yuanzhe Yao,