Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10224948 | Solar Energy Materials and Solar Cells | 2019 | 6 Pages |
Abstract
Passivation quality of poly-Si contacts with different phosphorus doping concentration were investigated in this study. Intrinsic poly-Si layers were deposited by LPCVD on a tunnel oxide surface, followed by nâ¯+â¯poly-Si doping and hydrogenation. For lightly doped poly-Si contacts with phosphorus concentration of 2.1Ã1019cmâ3, higher temperatures and longer times increased iVOC achieving maximum value of 734âmV, as poly-Si grain size increases from 13ânm to 40ânm. However, for heavily doped poly-Si contacts with phosphorus concentration of 1.1Ã1020cmâ3, iVOC decreased from 731âmV to 696âmV as annealing time increased from 10 to 60âmin because Auger recombination rate increased from 9.3fA/cm2 to 21.6fA/cm2 as phosphorus in-diffusion occurs. The contact resistance of poly-Si contacts was also investigated to achieve a high fill factor. Finally, a poly-Si/SiOx/c-Si passivated contact solar cell using a poly-Si contact on the back and boron diffused emitter on the front was fabricated. As a result, high efficiency of 21.1% solar cell was achieved with VOC of 665âmV, JSC of 40.6âmA/cm2, and fill factor of 78.3%.
Related Topics
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Authors
HyunJung Park, Hyomin Park, Se Jin Park, Soohyun Bae, Hyunho Kim, Jee Woong Yang, Ji Yeon Hyun, Chang Hyun Lee, Seung Hyun Shin, Yoonmook Kang, Hae-Seok Lee, Donghwan Kim,