Excellent surface passivation of heavily doped p+ silicon by low-temperature plasma-deposited SiOx/SiNy dielectric stacks with optimised antireflective performance for solar cell application

The measured injection level dependence of the Auger-corrected inverse effective lifetime of symmetrical p+np+ samples symmetrically passivated by SiOx, SiOx/SiNy and SiNx films. For comparison, results obtained earlier for a similar sample symmetrically passivated by an AlOx/SiNx stack are also included [13]. The J0e values were obtained from fitting the data using Eq. (1). All layers were deposited by PECVD and the samples received a post-deposition anneal in an industrial firing furnace .