Industrial high performance crystalline silicon solar cells and modules based on rear surface passivation technology

In this paper a short review is given about the evolution of dielectric rear side passivation technologies as well as on state-of-the-art cell and module results. Simple and cost effective cell and module designs utilizing standard as well as innovative manufacturing technologies are presented. Furthermore, it is shown that for all major steps multiple process options are available to further reduce the manufacturing costs. Using an optimized emitter and screen-printed metallization on commercially available 156 mm×156 mm p-type Czochralski-grown crystalline silicon wafers best cell efficiencies of 19.9% without dielectric rear surface passivation and 21.0% with dielectric rear surface passivation are demonstrated. Replacing the screen-printed front contacts by electroplated nickel-copper contacts record efficiencies of up to 21.3% are reached. By optimizing the module design and materials to reduce the resistive and optical losses, a peak module power of up to 306 W and 19.5% aperture area efficiency are achieved.