Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10248824 | Solar Energy Materials and Solar Cells | 2005 | 11 Pages |
Abstract
Electrical and optical characterisation of hydrogenated amorphous silicon-oxygen alloy thin films (a-SiOx:H, x<2) grown in a single chamber radio frequency plasma enhanced chemical vapour deposition (PECVD) system at a high substrate temperature of 300 °C is presented. The samples were investigated by Fourier transform infrared spectroscopy (FTIR), optical transmission, the constant photocurrent method (CPM), conductivity and steady-state photoconductivity measurements. With increasing oxygen concentration, the Tauc gap increases from 1.69 to 2.73 eV. The sample with an oxygen concentration of 26.2 at% and a reasonably high bandgap of 2.18 eV shows photoconductivity comparable to that of pure a-Si:H films. The Urbach parameter (E0) increases almost linearly with oxygen concentration whereas the dangling bond defect density is found to be saturating at a value of about 7.1Ã1016 cmâ3. One of the highly alloyed samples with E0=123meV exhibited a detectable photosensitivity.
Related Topics
Physical Sciences and Engineering
Chemical Engineering
Catalysis
Authors
A. BacıoÄlu, A.O. KodolbaÅ, Ã. Ãktü,