Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10248859 | Solar Energy Materials and Solar Cells | 2005 | 13 Pages |
Abstract
It is found that the diffusion doping of CdTe thin films by Cu at 400°C results in a sharp decrease of resistivity up to 7 orders of magnitude of p-type material, depending on thickness of Cu film. The comparative study of performance of CdTe(Cu)/CdS and CdTe/CdS cells has been studied. It is shown that the diffusion doping of CdTe film by Cu increases efficiency of CdTe(Cu)/CdS cells from 0.9% to 6.8%. The degradation of photovoltaic parameters of CdTe(Cu)/CdS cell, during testing under forward and reverse bias at room temperature, proceeds at a larger rate than those of CdTe/CdS cell without Cu. The degradation of performance of CdTe(Cu)/CdS cells is tentatively assigned to electrodiffusion of Cu in CdTe, resulting in redistribution of concentration of Cu-related centers in CdTe film and heterojunction region.
Keywords
Related Topics
Physical Sciences and Engineering
Chemical Engineering
Catalysis
Authors
T.D. Dzhafarov, S.S. Yesilkaya, N. Yilmaz Canli, M. Caliskan,