Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10248865 | Solar Energy Materials and Solar Cells | 2005 | 7 Pages |
Abstract
The AC parameters (cell capacitance and cell resistance) of Copper Indium Diselenide (CuInSe2) solar cell are measured using time-domain technique. The cell capacitance is calculated from the open circuit voltage decay (OCVD) and cell resistance with solar cell I-V characteristics measured in dark. The solar cell exhibits high parallel resistance and low parallel capacitance. The doping concentration and built in voltage are derived from the 1/CP2 versus bias voltage graph. The built-in voltage of the solar cell shows good agreement with measurements published in the literature.
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Authors
M.P. Deshmukh, J. Nagaraju,