Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10248868 | Solar Energy Materials and Solar Cells | 2005 | 8 Pages |
Abstract
Temperature characteristics of the open-circuit voltage (Voc) were investigated in the temperature range from 30°C to 240°C for the InGaP/InGaAs/Ge triple-junction cells. Also, single-junction cells that had the similar structure to the subcells in the triple-junction cells were studied. In the high-temperature range (from 170°C to 240°C), the temperature coefficients of Voc of the InGaP/InGaAs/Ge triple-junction solar cell (dVoc/dT) were different from those in the low-temperature range (from 30°C to 100°C). This is because photo-voltage from the Ge subcell becomes almost 0 V in the high-temperature range. It was found that the open-circuit voltage of a Ge single-junction cell reduced to almost 0 V temperatures over 120°C under 1 sun condition.
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Authors
Kensuke Nishioka, Tatsuya Takamoto, Takaaki Agui, Minoru Kaneiwa, Yukiharu Uraoka, Takashi Fuyuki,