Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10249236 | Solar Energy Materials and Solar Cells | 2005 | 6 Pages |
Abstract
The device parameters (carrier lifetime, ideality factor), and physical parameters (built-in voltage, doping concentration) of silicon (Si) and gallium arsenide (GaAs/Ge) solar cells are measured at different temperatures using time domain technique. Carrier lifetime is calculated from open circuit voltage decay (OCVD). Built-in voltage and doping concentration are derived from the cell capacitance measured at different bias voltages. Ideality factor is derived from the I-V characteristics of solar cell. Carrier lifetime increases while built-in voltage decreases with increase in temperature. Ideality factor of the solar cell decreases with temperature.
Keywords
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Authors
M.P. Deshmukh, J. Nagaraju,