Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10249316 | Solar Energy Materials and Solar Cells | 2005 | 11 Pages |
Abstract
In this paper, Ag-based paste was screen-printed on the polished as well as on the textured p-type (100) single crystalline silicon wafers. Three types of baking processes were studied: the tube furnace, the belt furnace and the hot plate baking. The effective contact areas of Ag/Si system were measured with a novel method, namely metal insulator semiconductor structure measurement. The results show that after baking on the hot plate at 400°C for 5 min, the size and number of pores in the Ag film layer as well as at the interface between silver layer and silicon decreases significantly, the effective contact area also increases about 20%, particularly on the textured silicon substrate.
Keywords
Related Topics
Physical Sciences and Engineering
Chemical Engineering
Catalysis
Authors
Tietun Sun, Jianmin Miao, Rongming Lin, Yongqing Fu,