Article ID Journal Published Year Pages File Type
10268820 Electrochimica Acta 2011 6 Pages PDF
Abstract
► Copper sulfide (CuxS) microstructures on Si wafer has been prepared using a wet chemistry method. ► To obtain high quality CuxS films, preparative conditions were optimized. Scanning electrochemical microscopy (SECM) was employed to examine the properties of the CuxS films. ► The apparent electron-transfer rate constant (k) of CuxS surface was estimated as 0.04 cm/s. ► The SECM current map showed high edge acuity of the micro-patterned CuxS.
Related Topics
Physical Sciences and Engineering Chemical Engineering Chemical Engineering (General)
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