Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10268820 | Electrochimica Acta | 2011 | 6 Pages |
Abstract
⺠Copper sulfide (CuxS) microstructures on Si wafer has been prepared using a wet chemistry method. ⺠To obtain high quality CuxS films, preparative conditions were optimized. Scanning electrochemical microscopy (SECM) was employed to examine the properties of the CuxS films. ⺠The apparent electron-transfer rate constant (k) of CuxS surface was estimated as 0.04 cm/s. ⺠The SECM current map showed high edge acuity of the micro-patterned CuxS.
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Authors
Miao Chen, Jing Zhao, Xiaocui Zhao,