Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10276309 | Journal of Electroanalytical Chemistry | 2005 | 7 Pages |
Abstract
The electrochemical atomic layer epitaxy methodology was employed for the growth of CdSe on Ag(1 1 1), for up to 50 deposition cycles. The voltammetric analysis of the first Cdupd peak indicates a mechanism of two-dimensional growth: this is consistent with layer-by-layer growth, which is a good prerequisite for epitaxial deposits. The amount of Cd and Se deposited in a given number of cycles, as determined by stripping the deposits first anodically and then cathodically, is a function of the number of cycles employed, again suggesting a layer-by-layer growth. The charges associated with each layer of Cd and Se, 75 μC cmâ2, give the right 1:1 stoichiometric ratio between the elements, indicating the formation of a compound. Preliminary results from a structural analysis carried out by extended X-ray absorption spectroscopy (EXAFS) at the Se K edge confirm the presence of Cd neighbors around Se.
Keywords
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Physical Sciences and Engineering
Chemical Engineering
Chemical Engineering (General)
Authors
F. Loglio, M. Innocenti, F. D'Acapito, R. Felici, G. Pezzatini, E. Salvietti, M.L. Foresti,