Electrochemical deposition of Zn3P2 thin film semiconductors on tin oxide substrates

The dark current-voltage measurements of SnO2/Zn3P2/C devices indicated a rectifying behavior and a reverse saturation current density of 1.7×10−7 A/cm2, which is in good accordance with that obtained from films prepared using vacuum technique. Also, the capacitance-voltage measurements showed that the number of interface states and the built in potential are in the order of 5×10−9 cm−3 and 0.85 V, respectively. These preliminary results for Zn3P2 thin films reveal that, this semiconductor material can be used for solar cell applications.