Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10392390 | International Communications in Heat and Mass Transfer | 2005 | 10 Pages |
Abstract
This paper studies the reactive flow in IC encapsulation by the CAE molding simulation and the wire-sweep phenomena. In fact, it presents a new methodology used to consider the effect of wire density (number of wire) by controlling the shape factor to simulate the flow resistance. The results show a better solution for melt-front advancement and wire-sweep prediction. Finally, one study case for high pin-count packages (BGA) is used to verify the research.
Keywords
Related Topics
Physical Sciences and Engineering
Chemical Engineering
Fluid Flow and Transfer Processes
Authors
W.R. Jong, Y.R. Chen, T.H. Kuo,