| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10403013 | III-Vs Review | 2005 | 4 Pages |
Abstract
The UCSB Santa Barbara location suited the North American Molecular Beam Epitaxy conference, with its relaxed, close-knit community. Sitting outside the amiably small airport, waiting to depart, after the conference, Ravi Droopad, Distinguished Member of Freescale Semiconductor technical staff reflected that NAMBE had been workshops and changed considerably, with the 2005 meeting, unlike earlier ones, showing in its attention to oxides and advanced material, the pressures now facing dead-end silicon.
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Gail Purvis,