| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 10403702 | III-Vs Review | 2005 | 4 Pages |
Abstract
Vitesse was recently presented with Frost & Sullivan's 2005 'Technology Innovation of the Year Award', for its innovative $6m VIP-2 InP HBT technology. But more recent DARPA awards focus on GaN and SiC. With contracts worth between $125.8m-$163.2m, GaN devices, with SiC substrates, can hardly fail to be seen as InP's successors.
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Gail Purvis,