Planar nanowire transistors from two-dimensional materials

In this work, side gate transistors based on graphene and molybdenum disulfide in comparison to their respective top or back gated devices are presented. The graphene devices were fabricated based on an all carbon technology on silicon carbide substrates, whereas the molybdenum disulfide transistors were fabricated using the exfoliation technique. The output characteristics are analyzed in terms of transconductance in dependence on the geometrical device properties for each material. It is shown that side gate transistors are able to reach the transconductances of conventional top-gate MOSFETs and that this type of transistor can be used as a simple tool for material properties characterization.