Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10406972 | Materials Science in Semiconductor Processing | 2016 | 6 Pages |
Abstract
RF plasma annealing (RFPA) and rapid thermal annealing (RTA) of high-dose implanted n-type and p-type amorphized Ge layers have been studied by Raman scattering spectroscopy and X-ray diffraction techniques. It is shown that recrystallization of n-Ge implanted by BF2+ ions requires higher RTA temperatures and power density of RFPA as compared to p-Ge implanted by P+ ions with the same dose. The RFPA has been performed at considerably lower temperatures than RTA and resulted in the formation of a sharp interface between the implanted and underlying Ge layers both for BF2+ ion implantation and P+ ions implantation.
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Authors
P.N. Okholin, V.I. Glotov, A.N. Nazarov, V.O. Yuchymchuk, V.P. Kladko, S.B. Kryvyi, P.M. Lytvyn, S.I. Tiagulskyi, V.S. Lysenko, M. Shayesteh, R. Duffy,