Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10406981 | Materials Science in Semiconductor Processing | 2016 | 4 Pages |
Abstract
The amorphization by implantation of strained silicon-germanium epitaxial layers is investigated by experiments and simulation according to the germanium content in the film and the implantation conditions. Experimental results are used to calibrate a numerical model based on a combined approach between a Binary Collision Approximation (BCA) module and a kinetic Monte Carlo (kMC) module. The calibration is implemented in the Synopsys Sentaurus Process simulator and a close agreement between simulations and experiments is shown. Experimental results show that by increasing the germanium concentration, amorphous thickness is reduced for high energy implantations. Germanium content seems to have less impact at low energy implantations.
Related Topics
Physical Sciences and Engineering
Engineering
Electrical and Electronic Engineering
Authors
Anthony Payet, Flavia Piegas Luce, Caroline Curfs, Benoît Mathieu, Benoît Sklénard, Jean-Charles Barbé, Perrine Batude, Sylvain Joblot, Clément Tavernier, Benjamin Colombeau, Sofiene Guissi, Ignacio Martin-Bragado, Patrice Gergaud,