Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10406996 | Materials Science in Semiconductor Processing | 2013 | 5 Pages |
Abstract
Phosphorus-doped n-type Ge layers were grown on p-type Si (100) wafers (8 in. in diameter, resistivity 5-15 Ω cm) using rapid thermal chemical vapor deposition (RTCVD). The surface morphology was very smooth, with a root mean square (RMS) surface roughness of 0.29 nm. The in-plane lattice constant calculated from high-resolution X-ray diffraction (HR-XRD) data was 0.5664 nm, corresponding to in-plane tensile strain of â¼0.47%. The Raman Ge peak for each location indicates tensile strain from the Ge wafer. We estimated the in-plane strain as tensile strain of â¼0.45%, in excellent agreement with the XRD analysis. Initial photocurrent spectrum experiments on the sample confirm valence band splitting of the direct gap induced by tensile strain. The temperature dependence of the direct bandgap energy EÎ1 of Ge can be described by the empirical Varshni expression EÎ1(T)=0.864-5.49Ã10-4T2/(T+296).
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Authors
Yeon-Ho Kil, Hyeon Deok Yang, Jong-Han Yang, Ah Hyun Park, Sukill Kang, Tae Soo Jeong, Taek Sung Kim, Kyu-Hwan Shim,