Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
10406999 | Materials Science in Semiconductor Processing | 2013 | 6 Pages |
Abstract
We optimized the lattice structure of sulfur-doped CuInSe2 using first principles. The lattice constants for CuIn(SxSe1-x)2 vary linearly with x according to a(x)=-0.02828x+0.58786Â nm and c(x)=-0.05692x+1.1834Â nm, which agree well with experimental data. The optical properties of CuIn(SxSe1-x)2 were then systematically investigated using first-principles calculations with the HSE06 functional. We present data for the complex dielectric function, refractive index, extinction coefficient, reflectivity index, absorption coefficient, and optical bandgap for CuIn(SxSe1-x)2. The optical bandgap Eg obtained from the absorption coefficient is 1.07Â eV for CuInSe2 and 1.384Â eV for CuInS2. These values are very close to experimental results, indicating that first-principles calculations can yield accurate bandgap values. The optical bandgap of CuIn(SxSe1-x)2 increases linearly with the sulfur concentration according to Eg=0.3139x+1.0825Â eV.
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Authors
Fu Cheng Wan, Fu Ling Tang, Zheng Xin Zhu, Hong Tao Xue, Wen Jiang Lu, Yu Dong Feng, Zhi Yuan Rui,