Article ID Journal Published Year Pages File Type
10407038 Materials Science in Semiconductor Processing 2013 5 Pages PDF
Abstract
Boron-containing GaAsSb/GaAs quantum wells (QWs) with different antimony (Sb) mole fractions were grown by low-pressure metal-organic chemical vapor deposition for the first time. The effects of boron incorporation on the performance of GaAsSb/GaAs QWs are discussed. For samples with low compressive strain, injection of triethylboron can enhance the Sb content and increase the compressive strain, although boron incorporation can lead to a reduction in strain. This effect was less for strained GaAsSb/GaAs QWs, so the compressive strain of these QWs did not vary. Room-temperature photoluminescence emission at 1116 nm with a full-width at half-maximum (FWHM) value of 56 meV was obtained for strained BGaAsSb/GaAs QWs.
Related Topics
Physical Sciences and Engineering Engineering Electrical and Electronic Engineering
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